Design and fabrication of type-II InP-based lasers and photodetectors integrated on SOI waveguide
نویسندگان
چکیده
We present the design and fabrication of 2 μm wavelength range type-II InP-based lasers and photodetectors integrated on a silicon photonic circuit. “W”-shaped type-II InGaAs/GaAsSb quantum wells are used as active region in the laser and photodetector structures. In order to achieve high efficient mode coupling, a taper structure in both the III-V waveguide and silicon waveguide is used. An anisotropic wet etching is used to fabricate a very narrow inverted taper tip. The integration of type-II lasers and photodetectors on a silicon photonic integrated circuit using the same III-V epitaxial stack for laser and detector enables the realization of a completely integrated spectroscopic sensor.
منابع مشابه
III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors.
2-µm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well photodetectors are presented. Low insertion loss (2.5-3 dB) and low crosstalk (-30 to -25 dB) AWGs are realized. The InP-based type-II photodetectors are integrated with the AWGs using two different coupling approaches. Adiabatic-taper-based photodete...
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